Eee102 Lab Report

EAST WEST UNIVERSITY DEPERTMENT OF ELECTRICAL AND ELECTRONIC ENGINEERING give NO: EEE 102 ELECTRONIC CIRCUITS-I EXPERIMENT NO: 01 I-V Characteristics and modeling of onward conductivity of a Diode NAME: THANVIR AHMED ID: 2011-3-80-019 GROUP: 2 Date of performance: 05/06/2012 documental: In this experiment, we will government note the I-V characteristics and determine the large and elfin signal models of forward conductivity of a p-n junction diode. duty tour diagramsa: Fig. 1: duty tour set up to measure forward bias I-V characteristics of a diode Answers to lab-report questions ANSWER TO THE LEB-REPORT interrogative sentence NO 1 FIG. 2: Plot of the I-V of the p-n junction diode ANSWER TO THE LEB-REPORT upper side dog NO 2 Here, Id1=2mA And Id2=2.5mA From graph, Vd1=0.58V and Vd2=0.61V VT = 0.0259V N = Vd2-Vd1 VTln?(ID2Id1) = 0.61-0.58 0.0259*ln?( 2.5*10^-32*10^-3 ) = 5.1908 Id1= Is eVd1/nVT * Is=Id1 e-Vd1/nVT=2*10^-3*exp(-0.58/5.1908*0.0259 ) * Is=0.

26mA ANSWER TO THE LEB-REPORT QUESTION NO 3 Cut-in/built-in voltage VDO = 0.5V ANSWER TO THE LEB-REPORT QUESTION NO 4 From graph VD=0.58V VD=VD0 + ID rD rD=VD-VD0ID =>rD=0.58-0.52*10^-3 =>rD=40 ohm ANSWER TO THE LEB-REPORT QUESTION NO 5 From answer 2, n=5.1908 So, rD=nVTID=5.1908*0.02592*10^-3=67.22 ohm ANSWER TO THE LEB-REPORT QUESTION NO 6If you want to compress a full essay, order it on ou r website: OrderCustomPaper.com

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